NDB510A ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Type Min T ..
NDB6020P ,P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description Enhancement Mode Field Effect Transistor / NDB6020P NDP6020P September (T = 2 ..
NDB603 ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
NDB6030L ,NDP6030L / NDB6030L
N-Channel Logic Level Enhancement Mode Field Effect Transistorapplications such as DC/DC convertersand high efficiency switching circuits where fastswitching, lo ..
NDB6030L ,NDP6030L / NDB6030L
N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description N-Channel Logic Level Enhancement Mode Field Effect Transistor NDP6030L / NDB60 ..
NDB6030L ,NDP6030L / NDB6030L
N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CARACTERISTICS t V 8DV 24 ΩtrttfQ VgID ..
NJM78M12DL1A-TE1 , 3-TERMINAL POSITIVE VOLTAGE REGULATOR
NJM78M15DL1A , 3-TERMINAL POSITIVE VOLTAGE REGULATOR
NJM78M15DL1A-TE1 , 3-TERMINAL POSITIVE VOLTAGE REGULATOR
NJM78M20FA , 3-TERMINAL POSITIVE VOLTAGE REGULATOR
NJM78M24FA , 3-TERMINAL POSITIVE VOLTAGE REGULATOR
NJM78M56FA , 3-TERMINAL POSITIVE VOLTAGE REGULATOR
NDB510A
N-Channel Enhancement Mode Field Effect Transistor
May 1994 NDP510A / NDP510AE / NDP510B / NDP510BE NDB510A / NDB510AE / NDB510B / NDB510BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field 15 and 13A, 100V. R = 0.12 and 0.15W. DS(ON) effect transistors are produced using Fairchild's Critical DC electrical parameters specified at proprietary, high cell density, DMOS technology. This elevated temperature. very high density process has been especially Rugged internal source-drain diode can eliminate tailored to minimize on-state resistance, provide the need for an external Zener diode transient superior switching performance, and withstand high suppressor. energy pulses in the avalanche and commutation 175°C maximum junction temperature rating. modes. These devices are particularly suited for low High density cell design (3 million/in²) for extremely voltage applications such as automotive, DC/DC low R . converters, PWM motor controls, and other battery DS(ON) 2 powered circuits where fast switching, low in-line TO-220 and TO-263 (D PAK) package for both through hole and surface mount applications. power loss, and resistance to transients are needed. _____________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise noted C NDP510A NDP510AE NDP510B NDP510BE Symbol Parameter NDB510A NDB510AE NDB510B NDB510BE Units V Drain-Source Voltage 100 V DSS V Drain-Gate Voltage (R < 1 MW) 100 V DGR GS V Gate-Source Voltage - Continuous ±20 V GSS ±40 V - Nonrepetitive (t < 50 ms) P I Drain Current - Continuous 15 13 A D - Pulsed 60 52 A P 75 W Total Power Dissipation @ T = 25°C D C Derate above 25°C 0.5 W/°C T ,T Operating and Storage Temperature Range -65 to 175 °C J STG T Maximum lead temperature for soldering 275 °C L purposes, 1/8" from case for 5 seconds © 1997 NDP510.SAM
