NCP5355DR2 ,12V Gate DriverELECTRICAL CHARACTERISTICS (Note 3) (0°C < T < 125°C; 9.2 V < V <13.2 V; 9.2 V < V < 26 V; V = Floa ..
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NCP5355DR2
12V Gate Driver
NCP5355
12 V Synchronous Buck
Power MOSFET Driver
The NCP5355 is a dual MOSFET gate driver optimized to drive the
gates of both high− and low−side Power MOSFETs in a Synchronous
Buck converter. The NCP5355 is an excellent companion to
multiphase controllers that do not have integrated gate drivers, such as
ON Semiconductor’s NCP5314 or NCP5316. This architecture
provides the power supply designer greater flexibility by being able to
locate the gate drivers close to the MOSFETs.
Driving MOSFETs with a 12 V source as opposed to a 5.0 V can
significantly reduce conduction losses. Optimized internal, adaptive
nonoverlap circuitry further reduces switching losses by preventing
simultaneous conduction of both MOSFETs.
The floating top driver design can accommodate MOSFET drain
voltages as high as 26 V. Both gate outputs can be driven low by
applying a low logic level to the Enable (EN) pin. An Undervoltage
Lockout function ensures that both driver outputs are low when the
supply voltage is low, and a Thermal Shutdown function provides the
IC with overtemperature protection.
The NCP5355 has the same pinout as the NCP5351 5.0 V
Gate Driver.
Features 8.0 V − 14 V Gate Drive Capability 2.0 A Peak Drive Current Rise and Fall Times < 15 ns Typical into 3300 pF Propagation Delay from Inputs to Outputs < 30 ns Adaptive Nonoverlap Time Optimized for Large Power MOSFETs Floating Top Driver Accommodates Applications Up to 26 V Undervoltage Lockout to Prevent Switching when the Input oltage is Low Thermal Shutdown Protection Against Overtemperature TG to DRN Pulldown Resistor Prevents HV Supply−Induced
Turn−On of Top MOSFET BG to PGND Pulldown Resistor Prevents Transient Turn On of
Bottom MOSFET Internal Bootstrap Diode Reduces Parts Count and Total
Solution Cost Pb−Free Package is Available
