NCP5201MN ,Dual Output DDR Power ControllerELECTRICAL CHARACTERISTICS (VSTBY = 5.0 V, VCC = 12 V, T = 0 to 70°C, L2 = 1.7 H, COUT = 3770 F, ..
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NCP5201MNR2 ,Dual Output DDR Power ControllerELECTRICAL CHARACTERISTICS (VSTBY = 5.0 V, VCC = 12 V, T = 0 to 70°C, L2 = 1.7 H, COUT = 3770 F, ..
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NCP5201MN
Dual Output DDR Power Controller
NCP5201
Dual Output
DDR Power Controller
The NCP5201 Dual DDR Power Controller is specifically
designed as a total power solution for a high current DDR memory
system. This IC combines the efficiency of a PWM controller for the
VDDQ supply with the simplicity of a linear regulator for the VTT
memory termination voltage. The secondary regulator (VTT) is
designed to automatically track at half the primary regulator voltage
(VDDQ). An internal power good voltage monitor tracks both
VDDQ and VTT outputs and notifies the user in the event of a fault
on either output. Protective features include soft−start circuitry and
undervoltage monitoring of VCC and VSTBY. The IC is packaged in
a 5 × 6 QFN−18.
Features Incorporates VDDQ, VTT Regulators Internal Switching Standby Regulator for VDDQ All External Power MOSFETs Are N−Channel Adjustable VDDQ VTT Tracks VDDQ/2 Fixed Switching Frequency of 250 kHz for VDDQ in Normal Mode Doubled Switching Frequency (500 kHz) for Standby Mode Soft−Start Protection for VDDQ Undervoltage Monitor Short−Circuit Protection for Both VDDQ and VTT Outputs Housed in a space saving 5 × 6 QFN−18
Typical Applications DDR Termination Voltage Active Termination Busses (SSTL−2, SSTL−3)
