N302AS ,N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETsApplications• DC/DC convertersC (Typ) = 11000pFISSDRAIN(FLANGE)DGATEGSOURCESTO-263ABMOSFET Maximum ..
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N302AS
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9N302AS3ST April 2002 ISL9N302AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFETFast switching technology and features low gate charge while maintaining r =0.0019Ω (Typ), V =10V low on-resistance. DS(ON) GS r =0.0027Ω (Typ), V =4.5V Optimized for switching applications, this device improves DS(ON) GS the overall efficiency of DC/DC converters and allows Q (Typ) = 110nC, V =5V operation to higher switching frequencies. g GS Q (Typ) = 31nC gd Applications • DC/DC converters C (Typ) = 11000pF ISS DRAIN (FLANGE) D GATE G SOURCE S TO-263AB MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 75 A Continuous (T =25 C, V =10V) C GS o I Continuous (T =100 C, V =4.5V) 75 A D C GS o o Continuous (T =25 C, V =10V,R =43 C/W) 28 A C GS θJA Pulsed Figure 4 A Power dissipation 345 W P D o o Derate above 25 C 2.3 W/ C o T ,T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-263 0.43 C/W θJC o R Thermal Resistance Junction to Ambient TO-263 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity N302AS ISL9N302AS3ST TO-263AB 330mm 24mm 800 units ©2002 Rev. B1,April 2002
