N302AP ,N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETsApplications• DC/DC converters•C (Typ) = 11000pFISSSOURCEDRAINGATEDGDRAINS (FLANGE)TO-220ABMOSFET M ..
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N302AP
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9N302AP3 January 2002 ISL9N302AP3 N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET • Fast switching technology and features low gate charge while maintaining •r = 0.0019Ω (Typ), V = 10V low on-resistance. DS(ON) GS •r = 0.0027Ω (Typ), V = 4.5V Optimized for switching applications, this device improves DS(ON) GS the overall efficiency of DC/DC converters and allows •Q (Typ) = 110nC, V = 5V operation to higher switching frequencies. g GS •Q (Typ) = 31nC gd Applications • DC/DC converters •C (Typ) = 11000pF ISS SOURCE DRAIN GATE D G DRAIN S (FLANGE) TO-220AB MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 75 A Continuous (T = 25 C, V = 10V) C GS I D o Continuous (T = 100 C, V = 4.5V) 75 A C GS Pulsed Figure 4 A Power dissipation 345 W P D o o Derate above 25 C 2.3 W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220 0.43 C/W θJC o R Thermal Resistance Junction to Ambient TO-220 62 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity N302AP ISL9N302AP3 TO-220AB Tube N/A 50 ©2002 Rev. B January 2002
