MX7845JP ,Complete, 12-Bit Multiplying DACELECTRICAL CHARACTERISTICS
(VDD = +15V +-5%, Vss = -15V i5%, VREF = +1OV, AGND = DGND = 0V, VOUT ..
MX7845KN ,Complete, 12-Bit Multiplying DACApplications MX7845J/D O C to +70 C Dice'
' ' MX7845AEWG -40''C to +850 24 Wide so
Automatic Test ..
MX7847JN ,Complete / Dual / 12-Bit Multiplying DACsELECTRICAL CHARACTERISTICS(V = 11.4V to 16.5V, V = -11.4V to -16.5V, AGNDA = AGNDB = DGND = 0V, V = ..
MX7847JN+ ,Complete, Dual, 12-Bit Multiplying DAC with 8-Bit Bus InterfaceFeaturesThe MX7837/MX7847 are dual, 12-bit, multiplying, volt-♦ Two 12-Bit Multiplying DACs with Bu ..
MX7847JR ,Complete / Dual / 12-Bit Multiplying DACsApplicationsMSB LSB_________________Pin ConfigurationsINPUT INPUTLATCHLATCH48DAC LATCH ATOP VIEWRFB ..
MX7847KR ,Complete / Dual / 12-Bit Multiplying DACsFeaturesThe MX7837/MX7847 are dual, 12-bit, multiplying, volt-' Two 12-Bit Multiplying DACs with Bu ..
NDS8947 ,Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8947 ,Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8947 ,Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8958 ,Dual N & P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Type Min T ..
NDS8961 ,Dual N-Channel Enhancement Mode Field Effect TransistorFeatures3.1A, 30V. R = 0.1Ω @ V = 10V SO-8 N-Channel enhancement mode power field ..
NDS9410 ,Single N-Channel Enhancement Mode Field Effect TransistorNDS9410AApril 2000NDS9410ASingle N-Channel Enhancement Mode Field Effect Transistor
MX7845JN-MX7845JP-MX7845KN
Complete, 12-Bit Multiplying DAC
19-3986; Rev o: 10/91
Complete, 12-13“ Multiplying DAG
General Description
The MX7845 is a 12-bit, voltage-output, 4-quadrant, mul-
tiplying digitaI-to-analog converter (DAC), A precision
internal output amplifier and thin-film resistors, laser-
trimmed at the wafer level, maintain accuracy over the
full operating temperature range. The output amplifier is
internally compensated and drives i10V into a 2kn load.
The MX7845 has buffered latches that are easily inter-
faced with microprocessors. Data is transferred into the
input register from a 12-bit-wide data 98th. The inpyt
registers aregntrolled by standard CHIP SELECT (CS)
ad WRITVlR) signals. For stand-alone operation, the
CS and WR inputs are grounded, making all latches
transparent. All logic inputs are level-triggered and com-
patible with TTL and +5V CMOS logic levels. For a
detailed description of MX7845 operation, refer to the
MAX501/MAX502 data sheet.
Applications
Automatic Test Equipment
Digital Attenuators
Programmable Power Supplies
Programmable-Gain Amplifiers
Digital to 4-20mA Converters
Functional Diagram
4R 2R 2H R
D11 DO AGND
[MSB) (LSB)
MX7845 SIMPLIFIED DAC AND AMPLIFIER CIRCUIT
/M] /IIX|]/M]
Features
. Complete MDAC with Output Amplifier
. 4-Quadrant Multiplication
. Guaranteed Monotonlc (TMIN to TMAX)
. Matched Application Resistors
. Small 0.3" 24-Pin DIP Package
Ordering Information
PART TEMP. RANGE PM-PACKAGE
MX7845JN 0''C to +70°C 24 Narrow Plastic DIP
MX7845KN 0°C to +70'C 24 Narrow Plastic DIP
MX7845JR 0°C to +70'C 24 Wide SO
MX7845KR CC to +70''C 24 Wide so
MX7845JF' 0°C to +70”C 28 PLCC
MX7845KP 0'C to +70°C 28 PLCC
MX7845J/D 0°C to +70'C Dice"
MX7845AEWG -40°C to +850 24 Wide so
MX7845BEWG .40’c to +85''C 24 Wide so _
MX7845AO -40°C to +85°C 24 Narrow CERDIP
MX784SBQ -40°C to +850 24 Narrow CERDIP
MX7845SE -55'C to +125°C 28 LCC"
MX7845SO -55°C to +1250 24 Narrow CERDIP"
MX7845TQ 65°C to +125°C 24 NarrowCERDIP"
. Contact factory for dice specifications.
.. Contact factory for availability and processing to MIL-S TD-883.
Pin Configuration
TOPVIEW
voui Cf 21] RF8
(MSB)011 [E E R0
D10 ll MAXIM E] RB
MI [E MX7845 E RA
08 E E Von
DI l li] Vss
06 I Es] AGND
05 E E] VHEF
IM E E] E
03 E E] W
O E E nouse)
DGND L:-, E m
DlP/SO
lVl/J Xl/VI
Maxim Integrated Products 1
[VIA x Ipbrt is a registered trademark of Maxim Integrated Products.
swszxw
MX7845
Complete, 12-Bit Multiplying DAG
ABSOLUTE MAXIMUM RATINGS
VDD to DGND -FV--F_V....Fll_ -0.3V, +17V
Vss to DGND ............................ +0.3V, -17V
VREF to AGND ................................. t25V
VRFB to AGND ...................................... 125V
VRA to AGND .................................... t25V
VRB to AGND ...................................... E51/
VRC to AGND .................................... 125V
VOUT to AGND (Note 1) ............. Voo + 0.3V, Vss - th3V
VDD to AGND FI.....'---...-. »0.3V, +17V
AGND to DGND -r..P__..l_._.tlF.__._ -0.3V. VDD
Digital Input Voltage to DGND ............ -0.3V, VDD + 0.3V
Continous Power Dissipation (any package)
to +75''C .''''''r'rw.r_rr-__ww_.w_wwrrrrrrrr. 650mW
derate above +75°C ......................... 10mW/‘C
Operating Temperature Ranges:
MX7845JJK_ ............................ 0'C to +70'C
MX7845AJB_ ......... _ _ ............ -40'C Io +85'C
MX784SS_/T_ ___.....--- -55'C to +125'C
Storage Temperature Range .............. -65''C to +150°C
Lead Temperature (soldering, 10 sec) .............. +300'C
Note 1: VOUT may be shorted to AGND, VDD, or Vss if the package power dissipation is not exceeded.
Stresses trgf, those listed under 'Absolule Maximum Ratmgs' may cause permanent damage to the dewce. These are stress ralrngs only, and functional
operation t
the device at these or any other conditions beyond those indicated m the operatomg sections of the specifications IS not Implied. Exposure to
absolute maximum rating conditions for extended perods may affect device relatrdity,
ELECTRICAL CHARACTERISTICS
(VDD = +15V 15%, vss = -15V 15%.VREF = +10V, AGND = DGND = 0V, VOUT connected to RFB, Rt = 2kn, CL = 100pF.
TA = TMIN to TMAX, all grades, unless otherwise noted.)
L PARAMETER [SYMBOL] CONDITIONS I MIN TYP MAX UNITS
[ ACCURACY
Resolution I N 12 Bits
TA = +2590 MX7845KIB/T iI/2
MX7845J/A/S Al
Relative Accuracy(Note 2) INT MX7845K E3/4 - LSB
MX7845J/Bff 11
MX7845A 13/2
MX7845S t2
Differential Nonlinearity DNL Al LSB
TA = +250 MX7845K/BfT Al
MX784%//VS t2
Zero-Code Offset Error (Note 3) MX7845K/B t3 - mV
MX7840/A/T t4
1 MX78458 t5
Offset Temperature Coefficient tNeg t5 pV/"C
RFB, VOUT MX7845K/B/T _ t3
connected MX7845J/A/S t6
Gain Error RC or RB, VOUT con- MX7845K/B/T *6 LSB
nected; VREF = 5V MX7845J/A/S i9
RA, VOUT -Nhx7fi45K_/B/T :8
connected;
VREF = 25V MX7845J/A/S AIO
Gain Temperature Coefficient fgt/, RFB, VOUT connected t2 Egg/fg
Reference Input Résistance 8 12 16 k9
Application Resistor Ratio Matching RA to RB to RC matching 0.5 %
,IVI/JXl/Vl
