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MW4IC2230MBR1
RF LDMOS Wideband Integrated Power Amplifiers
The Wideband IC LineRF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2230 wideband integrated circuit is designed for W-CDMA base
station applications. It uses Motorolas newest High Voltage (26 to 28 Volts)
LDMOS IC technology and integrates a multi-stage structure. Its wideband
On- Chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W-CDMA.
Final Application Typical Single-carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 =
60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on
CCDF.
Power Gain 31 dB
Drain Efficiency 15%
ACPR @ 5 MHz = -45 dBc @ 3.84 MHz Bandwidth
Driver Application Typical Single-carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 =
60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain 31.5 dB
ACPR @ 5 MHz = -53.5 dBc @ 3.84 MHz Bandwidth Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW Output Power Characterized with Series Equivalent Large-Signal Impedance Parameters On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) Integrated Temperature Compensation with Enable/Disable Function On-Chip Current Mirror gm Reference FET for Self Biasing Application (1) Integrated ESD Protection Also Available in Gull Wing for Surface Mount In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
(1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1987.
