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MURD620CTIRN/a21224avai200V 6A HEXFRED Common Cathode Diode in a D-Pak package
MURD620CTTRIRN/a2000avai200V 6A HEXFRED Common Cathode Diode in a D-Pak package
MURD620CTTRLIRN/a21330avai200V 6A HEXFRED Common Cathode Diode in a D-Pak package


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MURD620CT-MURD620CTTR-MURD620CTTRL
200V 6A HEXFRED Common Cathode Diode in a D-Pak package
International
Tiallit, Rectifier
Bulletin PD-20737 rev.C 12/03
MURD620CT
Ultrafast Rectifier
Features
. Ultrafast Recovery Time
. Low Forward Voltage Drop
. Low Leakage Current
. 175°C Operating Junction Temperature
DescriptionIApplications
International Rect'fer's MUR.. series are the state ofthe art Ultra
fast recovery rectifiers specifically designed with optimized
performance offorward voltage drop and ultra fast recovery time.
The planar structure and the platinum doped life time control,
guarantee the best overall performance, ruggedness and reliability
characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC-DC converters as well as free-wheeling
diode in Iowvoltage inverters and choppermotordrives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce overdissipation
Package Outline
trr = 25ns
|F(AV) = 6Amp
VR = 200V
in the switching element and snubbers. D-PAK
Absolute Maximum Ratings
Parameters Max Units
VRRM Peak Repetitive Peak Reverse Voltage 200 V
IHAV) Average Rectified Forward Current Per Device 6 A
Total Device, (Rated VR), Tc = 146°C
IFSM Non Repetitive Peak Surge Current 50
IFM Peak Repetitive Forward Current Per Diode 6
(Rated VR, Square wave, 20 KHz), Tc = 146°C
T J, TSTG Operating Junction and Storage Temperatures - 65 to 175 (

MURD620CT
Bulletin PD-20737 rev. C 12/03
International
TOR Rectifier
Electrical Characteristics (ti) Tg = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
VBR, v, BreakdownVoltage, 200 - - V IR = 100pA
Blocking Voltage
VF Forward Voltage - - 1.0 V IF = 3A
- - 0.96 V IF = 3A, To = 125°C
- - 1.2 V IF = 6A
- - 1.13 V IF=6A,To--125''C
IR Reverse LeakageCurrent - - 5 pA VR = VR Rated
- - 250 pA To = 125''C, VR = VR Rated
CT Junction Capacitance - 12 - pF VR = 200V
Ls Series Inductance - 8.0 - nH Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @
Tg = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
trr Reverse RecoveryTime - - 35 ns IF = 1.0A, diF/dt = 5OA/ps, VR = 30V
- - 25 IF = 0.5A, IR = 1.0A, lREc = 0.25A
- 19 - To = 25°C IF = 3A
26 To =125°C VR = 160V
dis /dt = 200Nps
IRRM Peak Recovery Current - 3.1 - A To = 25°C
- 4.6 - To = 125°C
Q, Reverse RecoveryCharge - 30 - nC T J = 25°C
- 60 - T J = 125°C
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
TJ Max. Junction Temperature Range - - - 65 to 175 ''C
Tsts Max. StorageTemperature Range - - - 65 to 175
Rmoc Thermal Resistance, Junction to Case PerLeg - - 9.0 ''CI W
RmJA Thermal Resistance, Junction to Ambient Per Leg - - 80
Rmcs CD Thermal Resistance, Case to Heatsink - - -
Wt Weight - 0.3 - g
- 0.01 - (oz)
Mounting Torque 6.0 - 12 Kg-cm
5.0 - 10 lbfjn
OD Mounting Surface, Flat, Smooth and Greased
2
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