IC Phoenix
 
Home ›  MM167 > MUN5111T1G-MUN5112T1G-MUN5114T1G-MUN5115T1G-MUN5130T1G,Bias Resistor Transistor
MUN5111T1G-MUN5112T1G-MUN5114T1G-MUN5115T1G-MUN5130T1G Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
MUN5111T1GONN/a6000avaiBias Resistor Transistor
MUN5112T1GONN/a39000avaiBias Resistor Transistor
MUN5114T1GONN/a13467avaiBias Resistor Transistor
MUN5115T1GONN/a2550avaiBias Resistor Transistor
MUN5115T1GLRCN/a150000avaiBias Resistor Transistor
MUN5130T1GONN/a8990avaiBias Resistor Transistor


MUN5115T1G ,Bias Resistor TransistorFeaturesCOLLECTORPIN 1• Pb−Free Packages are AvailableR (OUTPUT)1BASE• Simplifies Circuit Design(IN ..
MUN5115T1G ,Bias Resistor TransistorTHERMAL CHARACTERISTICS (See Order Info Table)Characteristic Symbol Max Unit M = Date CodeTotal De ..
MUN5116 ,Bias Resistor TransistorFeaturesCOLLECTORPIN 1• Pb−Free Packages are AvailableR (OUTPUT)1BASE• Simplifies Circuit Design(IN ..
MUN5116DW1 ,Dual Bias Resistor TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q ) (Continued)A 1 2C ..
MUN5116DW1T1 ,Dual Bias Resistor TransistorsTHERMAL CHARACTERISTICSCharacteristic1(One Junction Heated) Symbol Max UnitTotal Device Dissipation ..
MUN5116T1 ,Bias Resistor TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NC4D-DC5V , FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT
NC4D-DC5V , FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT
NC4D-JP-DC24V , FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT
NC4D-JP-DC48V , FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT
NC4D-L2-DC24V , FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT
NC7NP04K8X ,TinyLogic ULP Triple InverterNC7NP04 TinyLogic ULP Triple InverterOctober 2003Revised January 2005NC7NP04TinyLogic ULP Triple ..


MUN5111T1G-MUN5112T1G-MUN5114T1G-MUN5115T1G-MUN5130T1G
Bias Resistor Transistor
MUN5111T1 Series
Preferred Devices

Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−70/SOT−323 package which is designed for low power
surface mount applications.
Features
Pb−Free Packages are Available Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC−70/SOT−323 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel − Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
FR−4 @ Minimum Pad
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED