MUN2116T1 ,PNP SILICON BIAS RESISTOR TRANSISTORMaximum ratings are those values beyond which device damage can occur.
MUN2130T1 ,Bias Resistor Transistor**Order this documentSEMICONDUCTOR TECHNICAL DATAby MUN2111T1/D* ** *PNP Silicon Surface Mount Tran ..
MUN2132 ,Bias Resistor TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MUN2132T1 ,PNP SILICON BIAS RESISTOR TRANSISTORMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
MUN2133 ,Bias Resistor Transistorhttp://onsemi.comBias Resistor Transistor (BRT) contains a single transistor with amonolithic bias ..
MUN2133T1 ,PNP SILICON BIAS RESISTOR TRANSISTORELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NBSG53AMNG , 2.5V/3.3V SiGe Selectable Differential Clock and Data D Flip−Flop/Clock Divider with Reset and OLS
NBSG72AMNG ,2.5V/3.3VSiGe Differential 2 X 2 Crosspoint Switch with Output Level Selecta part of the GigaComm family of high performance SiliconGermanium products. The device is housed ..
NBSG86ABA ,2.5 V/3.3 V SiGe Differential Smart Gate with Output Level SelectEVALUATION BOARD MANUALDESCRIPTIONThis document describes the NBSG86A evaluation board What measure ..
NBSG86AMNG , 2.5V/3.3V SiGe Differential Smart Gate with Output Level Select
NBSG86AMNG , 2.5V/3.3V SiGe Differential Smart Gate with Output Level Select
NC ,Series Single Value Chip and Wire Capacitors Revision 28-Mar-03 101NC SeriesVishay Electro-FilmsDC WORKING VOLTAGES VALUES AND TOLERANCESNCA 0.0 ..
MUN2111-MUN2111T1-MUN2111T1G-MUN2112-MUN2112T1-MUN2113-MUN2113T1-MUN2114T1-MUN2115-MUN2115T1-MUN2116-MUN2116T1-MUN2132-MUN2132T1-MUN2133-MUN2134
Bias Resistor Transistor
MUN2111T1 Series
Bias Resistor T ransistors
PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a single
device and its external resistor bias network. The
Bias Resistor Transistor (BRT) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. The BRT eliminates these
individual components by integrating them into a single device. The
use of a BRT can reduce both system cost and board space. The device
is housed in the SC−59 package which is designed for low power
surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: Class 1
ESD Rating − Machine Model: Class B The SC−59 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die. Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
THERMAL CHARACTERISTICSMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.1. FR−4 @ Minimum Pad.2. FR−4 @ 1.0 x 1.0 inch Pad.
