MTY55N20E ,TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
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MTY55N20E
TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM
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N–Channel Enhancement–Mode Silicon GateThis advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain–to–source diode with fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters, PWM motor controls,
and other inductive loads. The avalanche energy capability is
specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients. Avalanche Energy Specified Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
