MTY100N10E ,Power MOSFET 100 Amps, 100 Volts3R , DRAIN-TO-SOURCE RESISTANCE (OHMS), DRAIN-TO-SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R DS(on) ..
MTY14N100E ,TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
MTY25N60E ,TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTY30N50E ,TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTY55N20E ,TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTZJ9.1B , MTZJ SERIES ZENER DIODES
NB2305AI1DR2G , 3.3 V Zero Delay Clock Buffer
NB2305AI1DR2G , 3.3 V Zero Delay Clock Buffer
NB2305AI1HDR2G , 3.3 V Zero Delay Clock Buffer
NB2579ASNR2 , Low Power, Reduced EMI Clock Synthesizer
NB2669ASNR2 , Low Power, Reduced EMI Clock Synthesizer
NB2762ASNR2 , Low Power, Reduced EMI Clock Synthesizer
MTY100N10E
Power MOSFET 100 Amps, 100 Volts
MTY100N10E
Preferred DevicePower MOSFET 100 Amps, 100 Volts
N–Channel TO–264This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain–to–source diode with fast recovery
time. Designed for high voltage, high speed switching applications in
power supplies, converters, PWM motor controls, and other inductive
loads. The avalanche energy capability is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients. Avalanche Energy Specified Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
