MTW8N60E ,TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
MTY100N10E ,Power MOSFET 100 Amps, 100 Volts3R , DRAIN-TO-SOURCE RESISTANCE (OHMS), DRAIN-TO-SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R DS(on) ..
MTY14N100E ,TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
MTY25N60E ,TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTY30N50E ,TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTY55N20E ,TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NB2305AI1DR2G , 3.3 V Zero Delay Clock Buffer
NB2305AI1DR2G , 3.3 V Zero Delay Clock Buffer
NB2305AI1HDR2G , 3.3 V Zero Delay Clock Buffer
NB2579ASNR2 , Low Power, Reduced EMI Clock Synthesizer
NB2669ASNR2 , Low Power, Reduced EMI Clock Synthesizer
NB2762ASNR2 , Low Power, Reduced EMI Clock Synthesizer
MTW8N60E
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
