MTW45N10E ,TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTW7N80E ,TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM
MTW8N60E ,TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
MTY100N10E ,Power MOSFET 100 Amps, 100 Volts3R , DRAIN-TO-SOURCE RESISTANCE (OHMS), DRAIN-TO-SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R DS(on) ..
MTY14N100E ,TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM
MTY25N60E ,TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NB2305AI1DR2G , 3.3 V Zero Delay Clock Buffer
NB2305AI1DR2G , 3.3 V Zero Delay Clock Buffer
NB2305AI1HDR2G , 3.3 V Zero Delay Clock Buffer
NB2579ASNR2 , Low Power, Reduced EMI Clock Synthesizer
NB2669ASNR2 , Low Power, Reduced EMI Clock Synthesizer
NB2762ASNR2 , Low Power, Reduced EMI Clock Synthesizer
MTW45N10E
TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM
-- - "’# % #!$$%"#’% $" % "&!%! "
N–Channel Enhancement–Mode Silicon GateThis advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
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SEMICONDUCTOR TECHNICAL DATA
