MTW16N40E ,TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTW20N50E ,OBSOLETEhttp://onsemi.com3, DRAIN-TO-SOURCE RESISTANCERR , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURR ..
MTW26N15E ,TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTW35N15E ,TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTW45N10E ,TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTW7N80E ,TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM
NB2305AI1DR2G , 3.3 V Zero Delay Clock Buffer
NB2305AI1DR2G , 3.3 V Zero Delay Clock Buffer
NB2305AI1HDR2G , 3.3 V Zero Delay Clock Buffer
NB2579ASNR2 , Low Power, Reduced EMI Clock Synthesizer
NB2669ASNR2 , Low Power, Reduced EMI Clock Synthesizer
NB2762ASNR2 , Low Power, Reduced EMI Clock Synthesizer
MTW16N40E
TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM
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N–Channel Enhancement–Mode Silicon GateThis high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limitcurves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
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SEMICONDUCTOR TECHNICAL DATA
