MTW14N50E ,OBSOLETE
MTW16N40E ,TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTW20N50E ,OBSOLETEhttp://onsemi.com3, DRAIN-TO-SOURCE RESISTANCERR , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURR ..
MTW26N15E ,TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTW35N15E ,TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTW45N10E ,TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NB2305AI1DR2G , 3.3 V Zero Delay Clock Buffer
NB2305AI1DR2G , 3.3 V Zero Delay Clock Buffer
NB2305AI1HDR2G , 3.3 V Zero Delay Clock Buffer
NB2579ASNR2 , Low Power, Reduced EMI Clock Synthesizer
NB2669ASNR2 , Low Power, Reduced EMI Clock Synthesizer
NB2762ASNR2 , Low Power, Reduced EMI Clock Synthesizer
MTW14N50E
OBSOLETE
