MTSF2P02HD ,SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 2.)CCharacteristic Symbol Min Ty ..
MTSF3N02HD ,Power MOSFET 3 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MTSF3N03HD ,Power MOSFET 3 Amps, 30 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
MTSM3515-HRG , Marktech SOT−23 SMT LEDs
MTU8B56EP , EPROM-Based 8-Bit CMOS Microcontroller
MTU8B56EP , EPROM-Based 8-Bit CMOS Microcontroller
NAND512W3A0AN6 ,128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash MemoriesBlock Diagrams . . . . . . 24Page Program 25Figure 17.Page Program Operation 25Cop ..
NAND512W3A0AN6E ,128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash MemoriesBlock Diagram . . . . . 9Figure 4. TSOP48 and USOP48 Connections, x8 devices . . . . . . . ..
NAND512W3A2BN6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512W3A2BN6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512W3A2BN6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512W3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
MTSF2P02HD
SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM
MTSF2P02HD
Preferred DevicePower MOSFET 2 Amps, 20 Volts
P−Channel Micro8�These Power MOSFET devices are capable of withstanding high
energy in the avalanche and commutation modes and the drain−to−source
diode has a very low reverse recovery time. Micro8 devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc−dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients. Miniature Micro8 Surface Mount Package − Saves Board Space Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life Logic Level Gate Drive − Can Be Driven by Logic ICs Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Avalanche Energy Specified Mounting Information for Micro8 Package Provided
