MTP7N20 ,N-Channel Power MOSFETs, 7A, 150-200VElectrical Characteristics (T C: 25°C unless otherwise noted)
Symbol Characteristic Min Max Unit ..
MTP8N50E ,TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MTS2916A , Highly Integrated 3-Phase BLDC Sinusoidal Sensorless
MTSF1P02HD ,SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MTSF1P02HD ,SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 4)CCharacteristic Symbol Min Typ ..
MTSF2P02HD ,SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 2.)CCharacteristic Symbol Min Ty ..
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256W3A0AN6 ,128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memoriesapplications■ NAND INTERFACETSOP48 12 x 20mm– x8 or x16 bus width– Multiplexed Address/ Data– Pinou ..
MTP7N18-MTP7N20
N-Channel Power MOSFETs, 7A, 150-200V
