MTP5P06V ,TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MTP5P25 ,POWER FIELD EFFECT TRANSISTORMOTOROLA SC {XSTRS/R " ESEMOTOROLATECHNICAL DATAAdvance InformationPower Field Effect TransistorP-C ..
MTP60N06 ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM**Order this documentSEMICONDUCTOR TECHNICAL DATAby MTP60N06HD/D* * ** * Motorola Preferred Dev ..
MTP60N06 ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTP60N06HD ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM3R , DRAIN−TO−SOURCE RESISTANCE (OHMS), DRAIN−TO−SOURCE RESISTANCE DS(on)RDS(on)I , DRAIN CURRENT ( ..
MTP60N06HD ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NAND16GW3C4BN6E , 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
MTP5P06V
TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
MTP5P06V
Power MOSFET
5 Amps, 60 Volts
P−Channel TO−220This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.• Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
