MTP5N40E ,TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP5P06V ,TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MTP5P25 ,POWER FIELD EFFECT TRANSISTORMOTOROLA SC {XSTRS/R " ESEMOTOROLATECHNICAL DATAAdvance InformationPower Field Effect TransistorP-C ..
MTP60N06 ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM**Order this documentSEMICONDUCTOR TECHNICAL DATAby MTP60N06HD/D* * ** * Motorola Preferred Dev ..
MTP60N06 ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTP60N06HD ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM3R , DRAIN−TO−SOURCE RESISTANCE (OHMS), DRAIN−TO−SOURCE RESISTANCE DS(on)RDS(on)I , DRAIN CURRENT ( ..
NAND16GW3C4BN6E , 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
MTP5N40E
TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM
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N–Channel Enhancement–Mode Silicon GateThis advanced high voltage TMOS E–FET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients. Avalanche Energy Capability Specified at Elevated
Temperature Low Stored Gate Charge for Efficient Switching Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor — Absorbs High Energy in the
Avalanche Mode Source–to–Drain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
THERMAL CHARACTERISTICS(1) VDD = 50 V, ID = 5.0 A
(2) Pulse Width and frequency is limited by TJ(max) and thermal response
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
