MTP50N06EL ,TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP50N06V ,TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTP50N06VL ,Power MOSFET 42 Amps, 60 Volts, Logic Level
MTP5N20 ,POWER FIELD EFFECT TRANSISTORELECTRICAL CHARACTERISTICS (TC = 25°C unless otherWIse noted)Characteristic Symbol Min Max UnitOFF ..
MTP5N40E ,TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP5P06V ,TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
NAND08GAH0AZA5E , 1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard™ interface
NAND16GW3C4BN6E , 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
MTP50N06EL
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
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N–Channel Enhancement–Mode Silicon GateThis advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
