MTP40N10E ,Power MOSFET 40 Amps, 100 Volts
MTP4N08 ,N-Channel Power MOSFETs, 5.5 A, 60-100V3469674 FAIRCHILD SEMICONDUCTOR YI iii0lberssu; DUE7EI3L| ll
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MTP4N40E ,TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP4N50E ,TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP4N80E ,OBSOLETEELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP50N06 ,TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM**Order this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06V/D* * *** *Motorola Preferred Devic ..
NAND02GW3B2DN6E , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
NAND02GW3B2DN6E , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
NAND02GW3B2DZA6E , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
NAND02GW3B2DZA6F , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
NAND04GW3B2BN6E , 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
NAND08GAH0AZA5E , 1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard™ interface
MTP40N10E
Power MOSFET 40 Amps, 100 Volts
