MTP3N50E. ,TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS**Order this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N50E/D* * ** ** * Motorola Preferred Dev ..
MTP3N60 ,Trans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220MTP3N60MTP3N60FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DMTP3N60 600 V ..
MTP40N10E ,Power MOSFET 40 Amps, 100 Volts
MTP4N08 ,N-Channel Power MOSFETs, 5.5 A, 60-100V3469674 FAIRCHILD SEMICONDUCTOR YI iii0lberssu; DUE7EI3L| ll
1ltlelltlIl--l-il" |RF510-513 'r-ir ..
MTP4N40E ,TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP4N50E ,TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NAND02GW3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GW3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GW3B2DN6E , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
NAND02GW3B2DN6E , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
NAND02GW3B2DZA6E , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
NAND02GW3B2DZA6F , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
MTP3N50E-MTP3N50E.
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
-- - -
N–Channel Enhancement–Mode Silicon GateThis advanced high voltage TMOS E–FET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients. Avalanche Energy Capability Specified at Elevated
Temperature Low Stored Gate Charge for Efficient Switching Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor — Absorbs High Energy in the
Avalanche Mode Source–to–Drain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
THERMAL CHARACTERISTICS(1) VDD = 50 V, ID = 3.0 A
(2) Pulse Width and frequency is limited by TJ(max) and thermal response
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
