MTP36N06V ,TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHMELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)JCharacteristic Symbol Min Typ Max Uni ..
MTP36N06V ,TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–to–Source Voltage V ..
MTP3N100E ,TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 10 ..
MTP3N120E ,TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP3N50E ,TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP3N50E. ,TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS**Order this documentSEMICONDUCTOR TECHNICAL DATAby MTP3N50E/D* * ** ** * Motorola Preferred Dev ..
NAND02GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GR3B2DZA6E , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
NAND02GR3B2DZA6F , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
NAND02GW3B2BN6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GW3B2BN6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
MTP36N06V
TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM
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N–Channel Enhancement–Mode Silicon GateTMOS V is a new technology designed to achieve an on–resis-
tance area product about one–half that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS E–FET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
New Features of TMOS V On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature Static Parameters are the Same for both TMOS V and
TMOS E–FET
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET, Designer’s and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
