MTP3055EL ,N-channel TMOS power FET logic level. 60 V, 12 A, Rds(on) 0.18 Ohm.ELECTRICAL CHARACTERISTICS - continued (Tc = 25°C unless otherwise noted)Characteristic Symbol Min ..
MTP3055V ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTP3055V. ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP3055VL ,Power MOSFET 12 Amps, 60 Volts, Logic Level3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDDS(on ..
MTP3055VL ,Power MOSFET 12 Amps, 60 Volts, Logic Level
MTP30N06VL ,Power MOSFET 30 Amps, 60 Volts, Logic Levelhttp://onsemi.com3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURREN ..
NAND01GW3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GR3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND02GR3B2DZA6E , 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
MTP3055EL
N-channel TMOS power FET logic level. 60 V, 12 A, Rds(on) 0.18 Ohm.
