MTP2N50 ,N-Channel Power MOSFETs, 3.0 A, 450 V/500 Vapplications, fi)
such as switching power supplies, converters, AC and DC
motor controls, relay a ..
MTP2N60E ,TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS3, DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE (OHMS)RDS(on) I , DRAIN CURRENT (AMP ..
MTP2P50 ,TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP2P50E ,TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 50 ..
MTP2P50EG ,Power MOSFET 2 Amps, 500 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP3055 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 60 VDS GSV Drain- ..
NAND01GR3B2CZA6 , 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GW3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GW3B2AN6 , 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
MTP2N50
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
