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Partno	Mfg	Dc	Qty	Available	Descript
MTP27N10E	ON	N/a	20	avai	TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM
MTP27N10E	MOT	N/a	15	avai	TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM
MTP27N10E	MOTO	N/a	17	avai	TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM

MTP27N10E ,TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM3, DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)RDS(on) ..
MTP27N10E ,TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP27N10E ,TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–to–Source Voltage V ..
MTP2955E ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP2955V ,Power MOSFET 12 Amps, 60 Voltshttp://onsemi.com3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURREN ..
MTP29N15E ,Power MOSFET 29 Amps, 150 Volts
NAND01GR3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3B2CZA6 , 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

MTP27N10E
TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM
MTP27N10E
Power MOSFET
27 Amps, 100 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.• Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

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