MTP23P06 ,Power Field Effect TransistorELECTRICAL CHARACTERISTICS - continued (TJ = 25°C unless otherwise noted)Characteristic Symbol Min ..
MTP23P06V ,Power MOSFET 23 Amps, 60 Volts
MTP27N10E ,TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM3, DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)RDS(on) ..
MTP27N10E ,TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP27N10E ,TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–to–Source Voltage V ..
MTP2955E ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NAND01GR3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3B2CZA6 , 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
MTP23P06
Power Field Effect Transistor
