MTP12P10 ,TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Max UnitOFF ..
MTP1302 ,OBSOLETE
MTP1306 ,TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–to–Source Voltage V ..
MTP15N05E , POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE
MTP15N05E , POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE
MTP15N06V ,TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
NAL40-7617 , 40W AC/DC Universal Input Switch Mode Power Supplies
NAND01GR3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3B2CZA6 , 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
MTP12P10
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM
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P–Channel Enhancement–Mode Silicon GateThis TMOS Power FET is designed for medium voltage, high
speed power switching applications such as switching regulators,
converters, solenoid and relay drivers. Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100°C Designer’s Data — IDSS, VDS(on), VGS(th) and SOA Specified
at Elevated Temperature Rugged — SOA is Power Dissipation Limited Source–to–Drain Diode Characterized for Use With Inductive Loads
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
THERMAL CHARACTERISTICS
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.