MTP12P06 ,POWER FIELD EFFECT TRANSISTORELECTRICAL CHARACTERISTICS (Tc = 25''C unless otherwise noted)Characteristic Symbol Min Max UnitOFF ..
MTP12P10 ,TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Max UnitOFF ..
MTP12P10 ,TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Max UnitOFF ..
MTP1302 ,OBSOLETE
MTP1306 ,TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–to–Source Voltage V ..
MTP15N05E , POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE
NAL40-7617 , 40W AC/DC Universal Input Switch Mode Power Supplies
NAND01GR3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3B2CZA6 , 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
MTP12P06
POWER FIELD EFFECT TRANSISTOR
