MTP12N06 ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP12N10E ,TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP12N20 ,N-Channel Power MOSFETs, 12A, 150-200 Vapplications, such as switching power supplies, UPS, AC
and DC motor controls, relay and solenoid ..
MTP12P06 ,POWER FIELD EFFECT TRANSISTORELECTRICAL CHARACTERISTICS (Tc = 25''C unless otherwise noted)Characteristic Symbol Min Max UnitOFF ..
MTP12P10 ,TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Max UnitOFF ..
MTP12P10 ,TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Max UnitOFF ..
NAL40-7617 , 40W AC/DC Universal Input Switch Mode Power Supplies
NAND01GR3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3B2CZA6 , 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
MTP12N06
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
-- - -
N–Channel Enhancement–Mode Silicon GateThis advanced TMOS power FET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new high
energy device also offers a gate–to–source zener diode designed
for 4 kV ESD protection (human body model). ESD Protected 4 kV Human Body Model 400 V Machine Model Avalanche Energy Capability Internal Source–To–Drain Diode Designed to Replace External
Zener Transient Suppressor–Absorbs High Energy in the
Avalanche Mode
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
