MTP10N10 ,N-Channel Power MOSFETs, 11 A, 60-100 VElectrical Characteristics (T C: 25°C unless otherwise noted)
Symbol Characteristic Min Max Unit T ..
MTP10N10. ,N-Channel Power MOSFETs, 11 A, 60-100 Vapplications, S
such as switching power supplies, converters, AC and DC
motor controls, relay and ..
MTP10N10E ,TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
MTP12N06 ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP12N10E ,TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP12N20 ,N-Channel Power MOSFETs, 12A, 150-200 Vapplications, such as switching power supplies, UPS, AC
and DC motor controls, relay and solenoid ..
NAL40-7617 , 40W AC/DC Universal Input Switch Mode Power Supplies
NAND01GR3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR3B2CZA6 , 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR3B2CZA6E , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR3B2CZA6F , 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
MTP10N10-MTP10N10.
N-Channel Power MOSFETs, 11 A, 60-100 V
