MTM40N20 ,POWER FIELD EFFECT TRANSISTORELECTRICAL CHARACTERISTICS - continued (Tc = 25''C unless otherwise noted)Characteristic Symbol Min ..
MTM55N10 , N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
MTM78E2B0LBF ,MOSFETs for Lithium-ion Battery ProtectionAbsolute Maximum Ratings Ta = 25 CParameter Symbol Rating Unit(D) (D) (D) (D)Drain-source Voltage ..
MTM86227 ,MOSFETs for DC-DC ConverterAbsolute Maximum Ratings Ta = 25 CParameter Symbol Rating UnitDrain to Source Voltage VDS 20 Inter ..
MTM86627 ,Silicon P-channel MOS FET (FET)Absolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit1 2 3(G) (S) (A)Drain-source surrend ..
MTM86627A ,Silicon P-channel MOS FET (FET)Absolute Maximum Ratings T = 25°CaSBDParameter Symbol Rating UnitDrain-source surrender voltage V ..
NA555DR ,Precision Timers 8-SOIC -40 to 105Features 3 DescriptionThese devices are precision timing circuits capable of1• Timing From Microsec ..
NA556DR ,Dual Precision Timers 14-SOIC -40 to 105maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functi ..
NA556DR ,Dual Precision Timers 14-SOIC -40 to 105FEATURESNA556...D OR N PACKAGE• Two Precision Timing Circuits Per Package NE556...D, N, OR NS PACKA ..
NA556DRG4 ,Dual Precision Timers 14-SOIC -40 to 105SLFS023G–APRIL 1978–REVISED JUNE 2006ORDERING INFORMATIONV (MAX)T (1)T PACKAGE ORDERABLE PART NUMBE ..
NAL40-7617 , 40W AC/DC Universal Input Switch Mode Power Supplies
NAND01GR3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
MTM40N20
POWER FIELD EFFECT TRANSISTOR
