MTD6N10E ,6 Amp DPAK Surface Mount Products, N-Channel, VDSS 100http://onsemi.com3, DRAIN−TO−SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R R , DRAIN−TO−SOURCE RESIST ..
MTD6N15 ,TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Max UnitOFF ..
MTD6N15T4 ,TMOS Power 150V .3RELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Max UnitOFF ..
MTD6N20E ,Power MOSFET 6 Amps, 200 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value Unit SDrain-to-Source Voltage ..
MTD6N20ET4 ,Power MOSFET 6 Amps, 200 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD6N20ET4G ,Power MOSFET 6 Amps, 200 Volts3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
N8T26AF , Schottky Three-State Quad Bus Driver/Receiver
N8T28F , Schottky Three-State Quad Bus Driver/Receiver
N8T96N , High Speed Hex 3-State Buffers/Inverters
NA555DR ,Precision Timers 8-SOIC -40 to 105Features 3 DescriptionThese devices are precision timing circuits capable of1• Timing From Microsec ..
NA556DR ,Dual Precision Timers 14-SOIC -40 to 105maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functi ..
NA556DR ,Dual Precision Timers 14-SOIC -40 to 105FEATURESNA556...D OR N PACKAGE• Two Precision Timing Circuits Per Package NE556...D, N, OR NS PACKA ..
MTD6N10E
6 Amp DPAK Surface Mount Products, N-Channel, VDSS 100
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N–Channel Enhancement–Mode Silicon GateThis advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number Replaces MTD5N10
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
