MTD4N20E ,OBSOLETE3, DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)RDS(on) ..
MTD4N20E ,OBSOLETE
MTD4N20E ,OBSOLETE
MTD4P05 ,POWER FIELD EFFECT TRANSISTORMOTOROLA SC (XSTRS/R F) bBF D " b35735” 009350“ 7ia7 -NOTbMOTOROLA" SEMICONDUCTORTECHNICAL DATADesi ..
MTD4P06 ,POWER FIELD EFFECT TRANSISTORELECTRICAL CHARACTERISTICS (Tc = 25''C unless otherwise noted)Chlrlctodnlc Symbol Min Max UnitOFF C ..
MTD502EF , 2 Port 10M/100M Switch With Build_in Memory
N87C54 , CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER
N87C54-24 , CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER
N87C58-1 , CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER
N8T26AF , Schottky Three-State Quad Bus Driver/Receiver
N8T28F , Schottky Three-State Quad Bus Driver/Receiver
N8T96N , High Speed Hex 3-State Buffers/Inverters
MTD4N20E
OBSOLETE
MTD4N20E
Preferred DevicePower MOSFET4 Amps, 200 Volts
N–Channel DPAKThis high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage–blocking capability without degrading
performance over time. In addition this advanced high voltage
MOSFET is designed to withstand high energy in the avalanche and
commutation modes. The energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
