MTD3302 ,OBOSLETEMAXIMUM RATINGS (T = 25°C unless otherwise specified)JY = YearParameter Symbol Value UnitWW = Work ..
MTD3302 ,OBOSLETE
MTD4N20E ,OBSOLETE3, DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)RDS(on) ..
MTD4N20E ,OBSOLETE
MTD4N20E ,OBSOLETE
MTD4P05 ,POWER FIELD EFFECT TRANSISTORMOTOROLA SC (XSTRS/R F) bBF D " b35735” 009350“ 7ia7 -NOTbMOTOROLA" SEMICONDUCTORTECHNICAL DATADesi ..
N87C54 , CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER
N87C54-24 , CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER
N87C58-1 , CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER
N8T26AF , Schottky Three-State Quad Bus Driver/Receiver
N8T28F , Schottky Three-State Quad Bus Driver/Receiver
N8T96N , High Speed Hex 3-State Buffers/Inverters
MTD3302
OBOSLETE
MTD3302
Advance Information
Power MOSFET
18 Amps, 30 Volts
N–Channel DPAKThis Power MOSFET is capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode has
a very low reverse recovery time. These devices are designed for use
in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients. Characterized Over a Wide Range of Power Ratings Ultralow RDS(on) Provides Higher Efficiency and
Extends Battery Life in Portable Applications Logic Level Gate Drive – Can Be Driven by
Logic ICs Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Avalanche Energy Specified
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
