MTD3055V ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM3, DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS), DRAIN−TO−SOURCE RESISTANCE RRDS(on) ..
MTD3055V ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD3055VL ,TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD3055VL1 ,Power MOSFET 12 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD3055VLT4 ,Power MOSFET 12 Amps, 60 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTD3055VT4 ,Power MOSFET 12Amps, 60 Volts3, DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS), DRAIN-TO-SOURCE RESISTANCE RRDS(on) ..
N87C251SA16 , HIGH-PERFORMANCE CHMOS MICROCONTROLLER
N87C251SB16 , HIGH-PERFORMANCE CHMOS MICROCONTROLLER
N87C42 , UNIVERSAL PERIPHERAL INTERFACE CHMOS 8-BIT SLAVE MICROCONTROLLER
N87C54 , CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER
N87C54-24 , CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER
N87C58-1 , CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER
MTD3055V
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
MTD3055V
Power MOSFET
12 Amps, 60 Volts
N−Channel DPAKThis Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.• Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)pad size.2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
