MTD2955ED ,TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount P-Channel Enhancement-Mode Silicon GateELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD2955ET4 ,TMOS E-FET Power Field Effect Transistor DPAK for Surface MountGateTMOS POWER FETThis advanced TMOS E−FET is designed to withstand high energy12 AMPERESin the ava ..
MTD2955V , P-Channel Enhancement Mode Field Effect Transistor [Life-time buy]3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MTD2955VT4 ,Migrate to NTD2955MAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain−to−Source Voltage V ..
MTD2955VT4G ,Migrate to NTD2955ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD2N40E ,Power MOSFET 2 Amps, 400 Volts3, DRAIN−TO−SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R R , DRAIN−TO−SOURCE RESISTANCE (OHMS)DS(o ..
N87C196KB , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KB16 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KB16 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KB16 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KB-16 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KC20 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
MTD2955ED
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
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P–Channel Enhancement–Mode Silicon GateThis advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number Replaces the MTD2955
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
