MTD20P03HDL ,Power MOSFET 20 Amps, 30 Volts, Logic Level P-Channel DPAKMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 30 ..
MTD20P03HDLT4 ,Power MOSFET 20 Amps, 30 Volts, Logic Level P-Channel DPAKMAXIMUM RATINGS (T = 25°C unless otherwise noted) SCRating Symbol Value UnitMARKING DIAGRAMSDrain−S ..
MTD20P03HDLT4G ,Power MOSFET 20 Amps, 30 Volts, Logic Level P-Channel DPAK3R , DRAIN-TO-SOURCE RESISTANCE (OHMS), DRAIN-TO-SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R DS(on) ..
MTD20P06HDL ,TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM3, DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)RDS(on) ..
MTD20P06HDLT4 ,Power MOSFET 20 Amps, 60 Volts, Logic LevelMAXIMUM RATINGS (T = 25°C unless otherwise noted)CMARKINGRating Symbol Value UnitDIAGRAMDrain−Sourc ..
MTD20P06HDLT4G ,Power MOSFET 20 Amps, 60 Volts, Logic LevelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N85C220-10 , Classic EPLDs
N85C220-7 , Classic EPLDs
N85C224-10 , Classic EPLDs
N87C196KB , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N87C196KB16 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
MTD20P03-MTD20P03HDL
TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM
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P–Channel Enhancement–Mode Silicon GateThis advanced HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Dis-
crete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
Designer’s, E–FET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
