MTD20N06V ,TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MTD20N06V ,TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD20P03 ,TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD20P03HDL ,Power MOSFET 20 Amps, 30 Volts, Logic Level P-Channel DPAKMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 30 ..
MTD20P03HDLT4 ,Power MOSFET 20 Amps, 30 Volts, Logic Level P-Channel DPAKMAXIMUM RATINGS (T = 25°C unless otherwise noted) SCRating Symbol Value UnitMARKING DIAGRAMSDrain−S ..
MTD20P03HDLT4G ,Power MOSFET 20 Amps, 30 Volts, Logic Level P-Channel DPAK3R , DRAIN-TO-SOURCE RESISTANCE (OHMS), DRAIN-TO-SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R DS(on) ..
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N85C220-7 , Classic EPLDs
MTD20N06V
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
MTD20N06V
Power Field Effect
Transistor
NïChannel DPAK
This device is a new technology designed to achieve an
onïresistance area product about oneïhalf that of standard MOSFETs.
This new technology more than doubles the present cell density of our
50 and 60 V devices. This device is designed to withstand high energy
in the avalanche and commutation modes. Designed for low voltage,
high speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against unexpected
voltage transients.
Features Onïresistance Area Product about Oneïhalf that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology Faster Switching than Predecessors Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature Surface Mount Package Available in 16 mm 13ïinch/2500 Unit Tape
& Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
DrainïtoïSource Voltage VDSS 60 Vdc
DrainïtoïGate Voltage (RGS = 1.0 M) VDGR 60 Vdc
GateïtoïSource Voltage ï Continuos
ï Nonïrepetitive (tp 10 ms)
VGS
VGSM2025
Vdc
Vpk
Drain Current ï Continuous
ï Continuous @ 100°C
ï Single Pulse (tp 10 µs)
IDM
Adc
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ 25°C (Note 2) 60
Watts
W/°C
Watts
Operating and Storage Temperature Range TJ, Tstg ï55 to
Single Pulse DrainïtoïSource Avalanche
Energy ï Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL =
20 Apk, L = 1.0 mH, RG = 25 )
EAS 200 mJ
Thermal Resistance ï Junction to Case
ï Junction to Ambient (Note 1)
ï Junction to Ambient (Note 2)
RJC
RJA
RJA
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8 from case for 10 seconds 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. When surface mounted to an FR4 board using the minimum recommended
NïChannel
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60 V 65 m
RDS(on) TYP
20 A
ID MAXV(BR)DSS
Gate
Source
Drain
Drain
Device Package Shipping
ORDERING INFORMATION
MTD20N06V DPAK 75 Units/Rail
DPAK
CASE 369C
(Surface Mount)
Style 2
MARKING
DIAGRAM
T20N06V = Device Code = Year = Work Week
MTD20N06VT4 DPAK 2500 Tape & Reel2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
