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MTD1P40E Fast Delivery,Good Price
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Partno Mfg Dc Qty AvailableDescript
MTD1P40EONN/a29avaiOBSOLETE
MTD1P40EMOTN/a20avaiOBSOLETE


MTD1P40E ,OBSOLETEto provide enhanced voltage–blocking capability without degradingperformance over time. In addition ..
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MTD1P40E
OBSOLETE
MTD1P40E
Preferred Device

Advance Information
Power MOSFET
1 Amp, 400 Volts
P–Channel DPAK

This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage–blocking capability without degrading
performance over time. In addition this advanced high voltage
MOSFET is designed to withstand high energy in the avalanche and
commutation modes. The energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
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