MTD1N50E ,TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM3, DRAIN-TO-SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R , DRAIN-TO-SOURCE RESISTANCE (OHMS)RDS(on) ..
MTD1N60E ,TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD1N80E ,TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD1P40E ,OBSOLETEELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD1P40E ,OBSOLETEto provide enhanced voltage–blocking capability without degradingperformance over time. In addition ..
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MTD1N50E
TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM
MTD1N50E
Preferred DevicePower MOSFET 1 Amp, 500 Volts
N−Channel DPAKThis high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition this advanced high voltage
MOSFET is designed to withstand high energy in the avalanche and
commutation modes. The energy efficient design also offers a
drain−to−source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
