MTD12N06EZL ,OBSOLETEELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD15N06V ,Power MOSFET 15 Amps, 60 Volts N-Channel DPAK3, DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS), DRAIN-TO-SOURCE RESISTANCE RRDS(on) ..
MTD15N06V ,Power MOSFET 15 Amps, 60 Volts N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD15N06VL ,TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD15N06VL ,TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MTD1N50E ,TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM3, DRAIN-TO-SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R , DRAIN-TO-SOURCE RESISTANCE (OHMS)RDS(on) ..
N82S23N ,256-bit TTL bipolar PROM 32 x 8
N8344AH , SDLC Communications Controller
N83C196KB , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
MTD12N06EZL
OBSOLETE
-- - !& %! - ! $! $# !"!# $#
N–Channel Enhancement–Mode Silicon GateThis advanced TMOS power FET is designed to withstand high
energy in the avalanche and mode and switch efficiently. This new
high energy device also offers a gate–to–source zener diode
designed for 4 kV ESD protection (human body model). ESD Protected 4 kV Human Body Model 400 V Machine Model Avalanche Energy Capability Internal Source–To–Drain Diode Designed to Replace External
Zener Transient Suppressor–Absorbs High Energy in the
Avalanche Mode
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
