MTD10N10ELT4G ,TMOS Power FETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTD1110 , Stepping Motor Driver ICs
MTD1110 , Stepping Motor Driver ICs
MTD1121F , Unipolar PWM Stepper Motor Driver
MTD1121F , Unipolar PWM Stepper Motor Driver
MTD1121F , Unipolar PWM Stepper Motor Driver
N82S23N ,256-bit TTL bipolar PROM 32 x 8
N8344AH , SDLC Communications Controller
N83C196KB , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
MTD10N10EL-MTD10N10ELT4-MTD10N10ELT4G
TMOS Power FET
MTD10N10EL
TMOS E-FET
Power Field Effect Transistor
DPAK for Surface Mount
N−Channel Enhancement−Mode Silicon
GateThis advanced TMOS E−FET is designed to withstand high energy
in the avalanche and commutation modes. The new energy efficient
design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
Features Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Surface Mount Package Available in 16 mm, 13−inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted) When surface mounted to an FR4 board using minimum recommended pad size.
