MTB75N06 ,TMOS POWER FET 75 AMPERES 60 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB9N25E ,9 Amp D2PAK Surface Mount Products, N-Channel, VDSS 250ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTC20136MBI1 ,ADSL Transceiver Controllerfunctional description and type per interfaceNTRSTJTAG Interface TDOTCKTDITMSIDDQT_ACKT_REQATest In ..
MTC20136MBI1 ,ADSL Transceiver Controllerblock diagram of the MTC20136. The functions can be grouped into thefollowing:– Microcontroller– Ex ..
MTC20154-TQ-C2 ,Integrated ADSL CMOS Analog Front-End CircuitApplicationsThe MTC20154 provides programmable low passfilters for each of the two channels and aut ..
MTC20154-TQ-C2 ,Integrated ADSL CMOS Analog Front-End CircuitBlock DiagramXtal-driver ICCQ CTRL/TSTTuningI/V - RefVCXO DAC Calibration ifcecircuitADC MUXG= -9.. ..
N82S23N ,256-bit TTL bipolar PROM 32 x 8
N8344AH , SDLC Communications Controller
N83C196KB , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
MTB75N06
TMOS POWER FET 75 AMPERES 60 VOLTS
-- - !% $! -- ! #! #"
N–Channel Enhancement–Mode Silicon GateThe D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This advanced
high–cell density HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Short Heatsink Tab Manufactured — Not Sheared Specially Designed Leadframe for Maximum Power Dissipation Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET, Designer’s and HDTMOS are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.
