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MTB75N03HDL
TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS
MTB75N03HDL
Preferred DevicePower MOSFET
75 Amps, 25 Volts, Logic Level
N−Channel D2 PAKThis Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Short Heatsink Tab Manufactured − Not sheared Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS (TC = 25°C unless otherwise noted) When mounted with the minimum recommended pad size.
