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MTB52N06VLT4ONN/a850avaiPower MOSFET 52 Amps, 60 Volts, Logic Level


MTB52N06VLT4 ,Power MOSFET 52 Amps, 60 Volts, Logic Levelhttp://onsemi.com3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURREN ..
MTB60N06 ,TMOS POWER FET 60 AMPERES 60 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB60N06HD ,TMOS POWER FET 60 AMPERES 60 VOLTSMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTB6N60E ,TMOS POWER FET 6.0 AMPERES 600 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB6N60E1 ,TMOS POWER FET 6.0 AMPERES 600 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB75N03HDL ,TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
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MTB52N06VLT4
Power MOSFET 52 Amps, 60 Volts, Logic Level
MTB52N06VL
Preferred Device

Power MOSFET 52 Amps, 60 Volts, Logic Level
N–Channel D2PAK

This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients. Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
When surface mounted to an FR4 board using the minimum recommended
pad size.
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