MTB50P03HDLT4 ,Power MOSFET 50 Amps, 30 Volts, Logic LevelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB50P03HDLT4G ,Power MOSFET 50 Amps, 30 Volts, Logic LevelELECTRICAL CHARACTERISTICS100 100T = -55 °CV ≥ 5 VT = 25 °C V = 10 V J5 V DSJ GS8 V 25°C100°C80 80 ..
MTB52N06V ,TMOS POWER FET 52 AMPERES 60 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB52N06V ,TMOS POWER FET 52 AMPERES 60 VOLTSMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTB52N06VLT4 ,Power MOSFET 52 Amps, 60 Volts, Logic Levelhttp://onsemi.com3, DRAIN-TO-SOURCE RESISTANCE , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURREN ..
MTB60N06 ,TMOS POWER FET 60 AMPERES 60 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
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MTB50P03HDL-MTB50P03HDLT4 -MTB50P03HDLT4G
Power MOSFET 50 Amps, 30 Volts, Logic Level
MTB50P03HDL
Preferred DevicePower MOSFET
50 Amps, 30 Volts, Logic Level
P–Channel D2PAKThis Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain–to–source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Short Heatsink Tab Manufactured – Not Sheared Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
