MTB3N120E ,TMOS POWER FET 3.0 AMPERES 1200 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB50N06EL ,TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTSMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTB50N06V ,TMOS POWER FET 42 AMPERES 60 VOLTS3, DRAIN−TO−SOURCE RESISTANCE , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)R RDS(on) ..
MTB50N06V ,TMOS POWER FET 42 AMPERES 60 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB50N06V ,TMOS POWER FET 42 AMPERES 60 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB50P03HDL ,Power MOSFET 50 Amps, 30 Volts, Logic LevelMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value Unit4Drain–Source Voltage V 3 ..
N82HS195BN , PHILIPS COMPONENTS-SIGNETICS
N82HS195BN , PHILIPS COMPONENTS-SIGNETICS
N82S23N ,256-bit TTL bipolar PROM 32 x 8
N8344AH , SDLC Communications Controller
N83C196KB , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
N83C198 , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
MTB3N120E
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
-- - $ # -- " "!
N–Channel Enhancement–Mode Silicon GateThe D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This high voltage
MOSFET uses an advanced termination scheme to provide
enhanced voltage–blocking capability without degrading perfor-
mance over time. In addition, this advanced TMOS E–FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. This new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. Avalanche Energy Capability Specified at Elevated Temperature Low Stored Gate Charge for Efficient Switching Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the
Avalanche Mode Source–to–Drain Diode Recovery time Comparable to Discrete Fast Recovery Diode See App. Note AN1327 – Very Wide Input Voltage Range; Off–line Flyback Switching Power Supply
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)(1) When surface mounted to an FR4 board using the minimum recommended pad size.
E–FET and Designer’s are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
