MTB29N15ET4 ,Power MOSFET 29 Amps, 150 Volts3R , DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)DS(on ..
MTB2N40E ,TMOS POWER FET 2.0 AMPERES 400 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
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MTB30P06V ,Power MOSFET 30 Amps, 60 Voltselectrical characteristics apply to operation atallows code to be written before hardware design is ..
MTB30P06V ,Power MOSFET 30 Amps, 60 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–to–Source Voltage V ..
MTB33N10E ,Power MOSFET 33 Amps, 100 Voltshttp://onsemi.com3, DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE (OHMS) I , DRAIN CURR ..
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MTB29N15ET4
Power MOSFET 29 Amps, 150 Volts
MTB29N15E
Preferred DevicePower MOSFET 29 Amps, 150 Volts
N–Channel D2PAKThis Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain–to–source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls. These devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted) When surface mounted to an FR4 board using the minimum recommended
pad size.
